原厂 | Infineon | 制造商型号 | IPB60R080P7ATMA1 |
---|---|---|---|
供应商 |
Element14 CN
英国仓
|
供应商型号 | 2841642RL |
类型 | MOSFET三极管 | 批号 | -- |
包装数 | -- | 包装 | -- |
产品描述 | MOSFET N-CH TO263-3 |
规格参数 | 数值 |
---|---|
Series | CoolMOS™ P7 |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 129W (Tc) |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 11.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |