| 原厂 | Vishay | 制造商型号 | SI8429DB-T1-E1 |
|---|---|---|---|
| 供应商 | A7B015 货源来自认证的授权分销商，供应商商务原因匿名交易；质量参照易库易平台相关保证条款。 | 供应商型号 | VISSI8429DB-T1-E1 |
| 类型 | MOSFET三极管 | 批号 | 201716 |
| 包装数 | 3000 | 包装 | -- |
| 产品描述 | MOSFET P-CH 8V 11.7A 2X2 4-MFP | ||
| 规格参数 | 数值 |
|---|---|
| Series | TrenchFET® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 11.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 5V |
| Vgs (Max) | ±5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640pF @ 4V |
| FET Feature | - |
| Power Dissipation (Max) | 2.77W (Ta), 6.25W (Tc) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 1A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-Microfoot |
| Package / Case | 4-XFBGA, CSPBGA |
