| 原厂 | Infineon | 制造商型号 | IRFH5110TRPBF |
|---|---|---|---|
| 供应商 |
Element14 CN
上海仓
|
供应商型号 | 2580005 |
| 类型 | MOSFET三极管 | 批号 | -- |
| 包装数 | -- | 包装 | -- |
| 产品描述 | MOSFET N-CH 100V 11A 8-PQFN | ||
| 规格参数 | 数值 |
|---|---|
| Series | HEXFET® |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 63A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3152pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 114W (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4 mOhm @ 37A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (5x6) |
| Package / Case | 8-PowerVDFN |
