| 原厂 | Infineon | 制造商型号 | SPB18P06PGATMA1 |
|---|---|---|---|
| 供应商 |
Element14 HK
英国仓
|
供应商型号 | 2212884 |
| 类型 | MOSFET三极管 | 批号 | -- |
| 包装数 | -- | 包装 | -- |
| 产品描述 | MOSFET P-CH 60V 18.7A TO-263 | ||
| 规格参数 | 数值 |
|---|---|
| Series | SIPMOS® |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 18.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 860pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 81.1W (Ta) |
| Rds On (Max) @ Id, Vgs | 130 mOhm @ 13.2A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-2 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
