| 原厂 | Infineon | 制造商型号 | BSC110N06NS3 G |
|---|---|---|---|
| 供应商 | A7B060 货源来自认证的授权分销商，供应商商务原因匿名交易；质量参照易库易平台相关保证条款。 | 供应商型号 | BSC110N06NS3 G |
| 类型 | MOSFET三极管 | 批号 | -- |
| 包装数 | 5000 | 包装 | -- |
| 产品描述 | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | ||
| 规格参数 | 数值 |
|---|---|
| RoHS | Details |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance | 9 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 2 V |
| Vgs - Gate-Source Voltage | 20 V |
| Qg - Gate Charge | 33 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| Channel Mode | Enhancement |
| Tradename | OptiMOS |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | OptiMOS 3 |
| Transistor Type | 1 N-Channel |
| Width | 5.15 mm |
| Forward Transconductance - Min | 25 S |
| Fall Time | 6 ns |
| Pd - Power Dissipation | 50 W |
| Rise Time | 77 ns |
| Factory Pack Quantity | 5000 |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 10 ns |
| Part # Aliases | BSC110N06NS3GATMA1 BSC11N6NS3GXT SP000453668 |
| Unit Weight | 0.003527 oz |
