| 原厂 | Infineon | 制造商型号 | IPD60R1K0CEATMA1 |
|---|---|---|---|
| 供应商 | A7B060 货源来自认证的授权分销商，供应商商务原因匿名交易；质量参照易库易平台相关保证条款。 | 供应商型号 | IPD60R1K0CEATMA1 |
| 类型 | MOSFET三极管 | 批号 | -- |
| 包装数 | 2500 | 包装 | -- |
| 产品描述 | MOSFET N-CH 600V TO-252-3 | ||
| 规格参数 | 数值 |
|---|---|
| Series | CoolMOS™ CE |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 1.5A, 10V |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
