原厂 | Infineon | 制造商型号 | IPB65R600C6ATMA1 |
---|---|---|---|
供应商 | A7B060 货源来自认证的授权分销商,供应商商务原因匿名交易;质量参照易库易平台相关保证条款。 | 供应商型号 | IPB65R600C6ATMA1 |
类型 | MOSFET三极管 | 批号 | -- |
包装数 | 1000 | 包装 | -- |
产品描述 | N-Channel 650V 7.3A (Tc) 63W (Tc) Surface Mount D²PAK (TO-263AB) |
规格参数 | 数值 |
---|---|
Series | CoolMOS™ |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 210µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |