| 原厂 | Infineon | 制造商型号 | IPB039N10N3GATMA1 |
|---|---|---|---|
| 供应商 | A7B060 货源来自认证的授权分销商，供应商商务原因匿名交易；质量参照易库易平台相关保证条款。 | 供应商型号 | IPB039N10N3GATMA1 |
| 类型 | MOSFET三极管 | 批号 | -- |
| 包装数 | 1000 | 包装 | -- |
| 产品描述 | MOSFET N-CH 100V 160A TO263-7 | ||
| 规格参数 | 数值 |
|---|---|
| Series | OptiMOS™ |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 160µA |
| Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.9 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-7 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
